c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . w w w w cp25c60 cp25c60 cp25c60 cp25c60 rev.a oct .2010 silicon silicon silicon silicon controlled controlled controlled controlled rectifiers rectifiers rectifiers rectifiers features repetitive peak off-state voltage:600v r.m.s on-state current (it (rms) =25a) low on-state voltage(1.3v(typ.)@i tm ) non-isolaed type general description standard gate triggering scr is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system . absolute maximum ratings (t j = 25 c unless otherwise specified ) symbol parameter condition value units v drm repetitive peak off-state voltage 600 v i t(av) average on-state current half sine wave: t c = 102 c 16 a i t(rms) r.m.s on-state current 180 conduction angle 25 a i tsm non repetitive surge peak on-state current tp=10ms 300 a tp=8.3ms 314 i 2 t i 2 t for fusing t= 10 ms 450 a 2 s di/dt critical rate of rise of on-state current 50 a/ ? p gm forward peak gate power dissipation 20 w p g(av) forward average gate power dissipation over any 20ms period 1 w i fgm forward peak gate current 5 a v rgm reverse peak gate voltage 5 v t j operating junction temperature -40~125 c t stg storage temperature -40~150 c thermal characteristics symbol parameter value units min typ max r j c thermal resistance junction to case - - 1.0 /w r j a thermal resistance junction to ambient - - 60 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w cp25c60 cp25c60 cp25c60 cp25c60 2 / 5 electrical characteristics (t c =25 , unless otherwise noted ) symbol parameter test conditions value units min typ max i drm repetitive peak off-state current v ak =v drm t c =25 t c =125 - - 5 a - - 2 m a v tm peak on-state voltage (1) i tm = 38 a, tp=380 ? - 1.3 1.6 v i gt gate trigger current (2) v d = 12v ,r l = 30 ? t c =25 3 - 25 m a v gt gate trigger voltage (2) v d =12v,r l =30 ? t c =25 - - 1.3 v v gd non-trigger gate voltage (1) v d =v drm , r l = 3.3k t j =125 0. 2 - - v dv/dt critical rate of rise off-state voltage linear slope up to v d = 2/3 v drm , gate open t j =125 800 - - v/ ? i h holding current i t = 500 ma, gate open t c =25 - - 50 ma i l dynamic resistance i g =1.2i gt 60 ma *notes: *notes: *notes: *notes: 1 pulse width 1.0ms,duty cycle 1% 2 r gk current is not included in measurement.
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w cp25c60 cp25c60 cp25c60 cp25c60 3 / 5 fig. 3 typical forward voltage fig. 4 thermal r e sponse fig.1gate characteristics fig .2 on-state characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w cp25c60 cp25c60 cp25c60 cp25c60 4 / 5
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance w w w w cp25c60 cp25c60 cp25c60 cp25c60 5 / 5 to to to to -220ab -220ab -220ab -220ab package package package package dimension dimension dimension dimension unit: mm
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